Pubulications

M.Koh, K.Hara, K.Horita, B.Shigeta, T.Matsukawa, A.Kishida, T.Tanii, M.Goto, I.Ohdomari: Radiation effects induced by high energy He single ions at Si/SiO2 interfaces, Proc. 1st Int'l Symp. on Control of Semiconductor Interfaces, 1993, 241.

T.Matsukawa, A.Kishida, T.Tanii, M.Koh, K.Horita, B.Shigeta, M.Goto, S.Matsuda, S.Kuboyama, I.Ohdomari: Total Dose Dependence of Soft-Error Hardness in 64kbit SRAMs Evaluated by Single-Ion Microprobe Technique, IEEE Trans. Nucl. Sci. 41, 1994, 2071.

M.Koh, K.Hara, K.Horita, B.Shigeta, T.Matsukawa, A.Kishida, T.Tanii, M.Goto, I.Ohdomari: Development of single ion beam induced charge (SIBIC) imaging technique using the single ion microprobe system, Nucl. Instrum. & Meth. Phys. Res. B 93, 1994, 82.

M.Koh, K.Hara, K.Horita, B.Shigeta, T.Matsukawa, A.Kishida, T.Tanii, M.Goto, I.Ohdomari: Reverse-Mode Single Ion Beam Induced Charge (R-mode SIBIC) Imaging for the Test of Total Dose Effects in n-ch Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), Jpn. J. Appl. Phys. 33, 1994, L962.

T.Matsukawa, S.Mori, T.Tanii, T.Arimura, M.Koh, K.Igarashi, T.Sugimoto, I.Ohdomari: Evaluation of Soft-Error Hardness of DRAMs under Quasi-Heavy Ion Irradiation Using He Single Ion Microprobe Technique IEEE Trans. Nucl. Sci. 43, 1996, 2849.

M.Koh, K.Horita, B.Shigeta, K.Igarashi, T.Matsukawa, T.Tanii, S.Mori, I.Ohdomari: Quantitative investigation of localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistors using single ion microprobe, Appl. Phys. Lett. 68, 1996, 3467.

M.Koh, B.Shigeta, K.Igarashi, T.Matsukawa, T.Tanii, S.Mori, I.Ohdomari: Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation, Appl. Phys. Lett. 68, 1996, 1552.

M.Koh, K.Horita, B.Shigeta, T.Matsukawa, A.Kishida, T.Tanii, S.Mori, I.Ohdomari: Radiation immunity of pMOSFETs and nMOSFETs examined by means of MeV He single ion microprobe, Appl. Surf. Sci. 104/105, 1996, 364.

T.Tanii, T.Matsukawa, S.Mori, M.Koh, B.Shigeta, K.Igarashi, I.Ohdomari: Nonscalability of Alpha-Particle-Induced Charge Collection Area, Jpn. J. Appl. Phys. 35, 1996, L688.

T.Matsukawa, S.Mori, T.Tanii, T.Arimura, M.Koh, K.Igarashi, T.Sugimoto, I.Ohdomari: Three-dimentional site dependence of single-ion-induced charge collection at a p-n junction-role of funneling and diffusion processes under different ion energy, J. Appl. Phys. 83, 1996, 3413.

K.Hara, T.Tanii, I.Ohdomari: Nucleation and Growth of Cu Adsorbates on Hydrogen-Terminated Si(111) Surface in Solution, Jpn. J. Appl. Phys. 38, 1999, 6860.

K.Hara, M.Koh, T.Matsukawa, T.Tanii, I.Ohdomari: Single-ion detection using nuclear track detector CR-39 plastic, Rev. Sci. Instrum. 70, 1999, 4536.

M.Koh, T.Goto, T.Iida, A.Sugita, T.Tanii, T.Shinada, T.Matsukawa, I.Ohdomari: Simple Process for Buried Nanopyramid Array (BNPA) Fabrication by Means of Dopant Ion Implantation and Dual Wet Etching, Extended Abstracts of the 2000 International Conference on Solid State Devices and Materials, 2000, 448.

T.Tanii, K.Hara, K.Ishibashi, K.Ohta, I.Ohdomari: Nucleation and growth of Cu clusters on highly oriented pyrolytic graphite observed with an in situ electrochemical scanning tunneling microscope, Appl. Surf. Sci. 162-163, 2000, 662.